Description:
The EL3H7-G series devices consist of an infrared emitting
diode, optically coupled to a phototransistor detector encapsulated
with green compound.
They are packaged in a 4-pin small outline SMD package.
| Datasheets | EL3H7 |
|---|---|
| Packaging | Cut Tape (CT) |
| Number of Channels | 1 |
| Voltage - Isolation | 3750Vrms |
| Current Transfer Ratio (Min) | 130% @ 5mA |
| Current Transfer Ratio (Max) | 260% @ 5mA |
| Turn On / Turn Off Time (Typ) | - |
| Rise / Fall Time (Typ) | 5µs, 3µs |
| Input Type | DC |
| Output Type | Transistor |
| Voltage - Output (Max) | 80V |
| Current - Output / Channel | 50mA |
| Voltage - Forward (Vf) (Typ) | 1.2V |
| Current - DC Forward (If) (Max) | 50mA |
| Vce Saturation (Max) | 200mV |
| Operating Temperature | -55°C ~ 110°C |
| Mounting Type | Surface Mount |
| Package / Case | 4-SOIC (0.173", 4.40mm) |
