Description:
Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the reso-nant or soft switching application such as induction heating, microwave oven.
Specifications:
| Datasheet | FGA25N120ANTDTU |
| Manufacturer | ON Semiconductor |
| Product Category: | IGBT Transistors |
| Technology: | Si |
| Mounting Style: | Through Hole |
| Package / Case: | TO 247 |
| Collector- Emitter Voltage VCEO Max: | 12000V |
| Collector-Emitter Saturation Voltage: | 2V |
| Maximum Gate Emitter Voltage: | +/- 20 V |
| Continuous Collector Current at 25 C: | 50 A |
| Continuous Collector Current Ic Max: | 50 A |
| Continuous Collector Current: | 25 A |
| Pd - Power Dissipation: | 312 W |
| Gate-Emitter Leakage Current: | +/- 250 nA |
| Unit Weight: | 6.401 g |
