Description:
This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.
Specifications:
| Datasheet | STB75NF75L |
| Manufacturer | STMicroelectronics |
| Product Category: | MOSFET |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO 263-3 |
| Number of Channels: | 1-Channel |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 75V |
| Id - Continuous Drain Current: | 75A |
| Rds On - Drain-Source Resistance: | 10 mOhms |
| Vgs - Gate-Source Voltage: | 15V |
| Pd - Power Dissipation: | 300W |
| Fall Time: | 60 ns |
| Rise Time: | 155 ns |
| Typical Turn-Off Delay Time: | 110 ns |
| Typical Turn-On Delay Time: | 35 ns |
| Unit Weight: | 4g |
