Description:
The EL3H7-G series devices consist of an infrared emitting
diode, optically coupled to a phototransistor detector encapsulated
with green compound.
They are packaged in a 4-pin small outline SMD package.
Datasheets | EL3H7 |
---|---|
Packaging | Cut Tape (CT) |
Number of Channels | 1 |
Voltage - Isolation | 3750Vrms |
Current Transfer Ratio (Min) | 130% @ 5mA |
Current Transfer Ratio (Max) | 260% @ 5mA |
Turn On / Turn Off Time (Typ) | - |
Rise / Fall Time (Typ) | 5µs, 3µs |
Input Type | DC |
Output Type | Transistor |
Voltage - Output (Max) | 80V |
Current - Output / Channel | 50mA |
Voltage - Forward (Vf) (Typ) | 1.2V |
Current - DC Forward (If) (Max) | 50mA |
Vce Saturation (Max) | 200mV |
Operating Temperature | -55°C ~ 110°C |
Mounting Type | Surface Mount |
Package / Case | 4-SOIC (0.173", 4.40mm) |