Description:
This Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in a wide variety of applications
Specifications:
| Datasheet | IRF3808STRLPBF |
| Manufacturer | Infineon |
| Product Category: | MOSFET |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO 263-3 |
| Number of Channels: | 1-Channel |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 75V |
| Id - Continuous Drain Current: | 106 A |
| Rds On - Drain-Source Resistance: | 7 mOhms |
| Vgs - Gate-Source Threshold Voltage: | 4 V |
| Qg - Gate Charge: | 220 nC |
| Pd - Power Dissipation: | 200W |
| Fall Time: | 120 ns |
| Rise Time: | 140 ns |
| Unit Weight: | 4g |
