Description:
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications
Specifications:
| Datasheet | IRF640NS |
| Manufacturer | Infineon |
| Product Category: | MOSFET |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO 263-3 |
| Number of Channels: | 1-Channel |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Id - Continuous Drain Current: | 18 A |
| Rds On - Drain-Source Resistance: | 150 mOhms |
| Vgs th - Gate-Source Threshold Voltage: | 2 V to 4 V |
| Vgs - Gate-Source Voltage: | 20 V |
| Qg - Gate Charge: | 44.7 nC |
| Pd - Power Dissipation: | 150W |
| Fall Time: | 5.5 ns |
| Rise Time: | 19 ns |
| Typical Turn-Off Delay Time: | 23 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Unit Weight: | 4g |
